| PART |
Description |
Maker |
| NMA5250-B1M |
High Power Broadband Noise Sources 100 Hz to 1500 MHz
|
Micronetics, Inc.
|
| NMA5108-B1M |
High Power Broadband Noise Sources 100 Hz to 300 MHz
|
Micronetics, Inc.
|
| CNS7106-D1C |
High Power Broadband Noise Sources 200 kHz to 12 MHz
|
Micronetics, Inc.
|
| NMA2516-1T |
High Power Broadband Noise Sources 7800 MHz to 8500 MHz
|
Micronetics, Inc.
|
| NMA5111-B1T |
High Power Broadband Noise Sources 1000 MHz to 2000 MHz
|
Micronetics, Inc.
|
| NMA2511-1T |
High Power Broadband Noise Sources 10 MHz to 1500 MHz
|
Micronetics, Inc.
|
| BFP193W Q62702-F1577 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3
|
Infineon Technologies AG
|
| BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFP183R Q62702-F1594 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
